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This invention relates to a method of manufacturing semiconductor devices wherein, after forming a contact hole, a back-side surface of a semiconductor wafer is exposed by subjecting a semiconductor wafer to an etching process using a gas containing chlorine, and then the semiconductor wafer is subjected to an etching process using a gas containing oxygen or fluorine, and a chlorine removing solution is further used, thereby removing chlorine from a surface of the semiconductor wafer. The present invention further relates to a semiconductor wafer product, wherein a contact hole is formed after removing chlorine from a semiconductor wafer, and the
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